Base algorithm for digitizers of the Monte Carlo hits of the Silicon Charge Detector implementing the effect of charge drift and diffusion in the silicon.
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void | GenerateHits (const ScdParticleHitsColl &particleHitsColl, const ScdHitsColl &hitsColl, ScdHitsColl &digHitsColl) |
| Generate the diffused hits. More...
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ScdGeoParams | CreateGeoParams (const ScdGeoParams &origGeoParams) |
| Creates the geometry parameter objects for the digitized detector. More...
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std::vector< Point > | PartitionTrajectory (const ParticleHit &hit) |
| Splits the trajectory of a particle hit into N sub-steps, according to the step-size specified in the algo. More...
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void | AccumulateSteps (std::vector< Hit > &layerHits, const ScdGeoParams &geoParams, unsigned int firstStrip, unsigned int lastStrip, const ScdDigitizationTools::ScdChargePacket &packet, float edep) |
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std::unique_ptr< ScdDigitizationTools::ScdChargePacket > | CreatePacket (Point position, DiffusionType diffType, const ScdGeoParams &geoParams) |
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Base algorithm for digitizers of the Monte Carlo hits of the Silicon Charge Detector implementing the effect of charge drift and diffusion in the silicon.
This algorithm assigns the energy released by single particles traversing a wafer of the SCD to the strips after propagating and diffusing charge deposits along the particle trajectory. Different diffusion methods should be implementable, but for now a simple gaussian model is used.
Needed event objects:
name | type | store | optional | description |
scdWaferHitsCollGGS | ScdHitsColl | evStore | no | The MC hits in the SCD wafers. |
scdWaferParticleHitsCollMC | ScdParticleHitsColl | evStore | no | The MC particle hits in the SCD wafers. |
Needed global objects:
name | type | store | optional | description |
scdGeoParamsColl | ScdGeoParamsColl | globStore | yes | Geometric parameters of the SCD. |
Produced event objects:
name | type | alias | store | description |
scdDriftDiffHitsCollMC | ScdHitsColl | scdHitsCollMC | evStore | The hits in the strips of the SCD. |
Produced global objects:
name | type | alias | store | description |
scdGeoParamsDriftDiffColl | ScdHitsColl | scdGeoParamsColl | evStore | The geometry parameters of the digitized SCD. |
Parameters:
name | type | default value | description |
pitch | float | 0.0050 | The pitch used for the digitization of the top SCD hits [cm]. |
minStepSize | float | 0.0002 | The minimum substep size along the particle path within the silicon [cm]. |
diffusionType | string | gaussianNonLinear | The diffusion model to be used [gaussian,gaussianNonLinear]. |
packet/biasVoltage | float | 80 | The bias voltage applied to the silicon [V]. |
packet/intrinsicVoltage | float | 35 | The intrinsic voltage of the SCD [V]. |
Gaussian diffusion parameters: N.B: These parameters are only available when using the naive gaussian drift model
name | type | default value | description |
packet/gaussian/holeEffDiffCoeff | float | 0.050 | The effective diffusion parameter for holes. It is expressed as a relative sigma growth per unit of distance travelled. |
packet/gaussian/electronEffDiffCoeff | float | 0.050 | The effective diffusion parameter for electrons. It is expressed as a relative sigma growth per unit of distance travelled. |